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Monday, June 25, 2012

5th Generation Schottky Barrier Diodes SU Series <b>Product Launch</b>

Shindengen Electric Manufacturing Co., Ltd. (headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan) developed the 5th generation for the SU series of Schottky barrier diodes (referred to as SBD below). The 5th generation trench type structure shows significant improvements in the trade-off between VF (forward voltage) and IR (reverse current). For the initial release of the first series, we began selling the “SG40SC10U” this last September in 2010.

Features
Using trench technology, the trade-off between VF and IR has been significantly improved. (15% improvement from our J series)VF 0.76V max. Condition: IF (forward current) = 20A; Tc (case temp.) = 25°CVRM(peak reverse voltage) 100V; current capacitance 40ATO-220 full mold (FTO-220G)    The trade-off between VF and IR was significantly improved in the newest 5th generation SU Series that we recently developed which incorporates trench technology. y using the SU Series, the customer can expect better overall power efficiency and also a reduction in heat generation on the diodes themselves . With respect to the basic power needs, this series also contributes to a more compact, lightweight and highly-efficient product.

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